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Photonic integrated circuits (PICs) are vital for developing affordable, high-performance optoelectronic devices that can be manufactured at an industrial scale, driving innovation and efficiency in various applications. Optical loss of modes in thin film waveguides and devices is a critical measure of their performance. Thin film growth, lithography, masking, and etching processes are imperfect processes that introduce significant sidewall and top-surface roughness and cause dominating optical losses in waveguides and photonic structures. This roughness, as perturbations couple light from guided to far-field radiation modes, leads to scattering losses that can be estimated from theoretical models. Typically, with UV-based lithography, sidewall roughness is significantly larger than wafer-top surface roughness. Atomic force microscopy (AFM) imaging measurement gives a 3D and high-resolution roughness profile, but the measurement is inconvenient, costly, and unscalable for large-scale PICs and at wafer-scale. Here, we evaluate the sidewall roughness profile based on 2D high-resolution scanning electron microscope (SEM) imaging. We characterized the loss on two homemade nitride and oxide films on 3-inch silicon wafers with 12 waveguide devices on each and correlated the scattering loss estimated from a 2D image-based sidewall profile and theoretical Payne model. The lowest loss of guided fundamental transverse electric (TE₀) mode is found at 0.075 dB/cm at 633 nm across 24 devices, a record at visible wavelength. Our work shows 100% success (edge continuity span exceeding 95% of image width/height) in edge detection in image processing of all images to estimate autocorrelation function and optical mode loss. These demonstrations offer valuable insights into waveguide sidewall roughness and a comparison of experimental and 2D SEM image processing based loss estimations with applications in loss characterization at wafer-scale PICs. 

Cavities in large-scale photonic integrated circuits (PICs) often suffer from a wider distribution of resonance frequencies due to fabrication errors. It is crucial to adjust the resonances of cavities using post-processing methods to minimize the frequency distribution. We have developed a concept of passive tuning by manipulating the mode index of a portion of a microring cavity, which we named mode index engineering (MIE). Through analytical studies and numerical experiments, we have found that depositing a thin film of dielectric material on top of the cavity or etching the material enables us to fine-tune the resonances and minimize the frequency distribution. This versatile method allows for the selective tuning of each cavity’s resonance in a large set of cavities in a post-fabrication step, providing robust passive tuning in large-scale PICs. We show that the proposed method achieves a tuning resolution below 1/Q and a range of up to 10³/Q for visible to near-infrared wavelengths. Furthermore, this method can be applied and explored in various integrated photonic cavities and material configurations. 

We present the design, fabrication and characterization of high quality factor silicon nitride nanobeam PhC cavities at visible wavelengths for coupling to diamond color centers in a cavity QED system. We demonstrate devices with a quality factor of ∼24, 000 (±250) around the zero-phonon line of the germanium-vacancy center in diamond. We also present an efficient fiber-to-waveguide coupling platform for suspended nanophotonics. By gently changing the corresponding effective indices at the fiber-waveguide interface, we achieve a coupling efficiency of ∼96% (±2%) at the cavity resonance. 

We report a facile synthetic approach to create stable radical block copolymers containing a secondary fluorinated block via anionic polymerization using a bulky, sterically hindered countercation composed of a sodium ion and di-benzo-18-crown-6 complex. The synthetic conditions described in this report allowed for controlled molecular weights and dispersity (<1.3) of both homopolymers: poly(2,2,6,6-tetramethyl-1-piperidinyloxy-methacrylate) (PTMA) and poly(2,2,2-trifluoroethyl methacrylate) (PTFEMA) as well as their block copolymers (PTMA- b -PTFEMA). The stable radical concentration of the polymers was determined by electron spin resonance (ESR) and showed radical content above 70%. An analysis of the microphase morphologies in PTMA- b -PTFEMA thin films via atomic force microscopy (AFM) and grazing incidence small angle X-ray scattering (GISAXS) showed clear evidence of long-range ordering of lamellar and cylindrical morphologies with 32 and 36 nm spacing, respectively. The long-range ordering of the morphologies was developed with the aid of two separate neutral layers: PTMA- ran -PTFEMA- ran -poly(hydroxyl ethyl methacrylate) (PHEMA) and poly(isobutyl methacrylate) (PiBMA)- ran -PTFEMA- ran -PHEMA, which helped us corroborate, along with the Zisman method, the surface energy estimation of PTMA to be 30.1 mJ m −2 .